Basic Electronic Engineering Quiz – Part-1 (Semiconductor Devices and PN Junction diode)

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Welcome to your %Basic Electronics Quiz%

1. During reverse bias, a small current develops known as:

a) Forward current

b) Reverse current

c) Reverse saturation current

d) Active current

2. How does a semiconductor behave at absolute zero?

a) Conductor

b) Insulator

c) Semiconductor

d) Protection device

3. What are the charge carriers in semiconductors?

a) Electrons and holes

b) Electrons

c) Holes

d) Charges

4. How are charge carriers produced in intrinsic semiconductors?

a) By pure atoms

b) By electrons

c) By impure atoms

d) By holes

5. What type of material is obtained when an intrinsic semiconductor is doped with pentavalent impurity?

a) N-type semiconductor

b) Extrinsic semiconductor

c) P-type semiconductor

d) Insulator

6. What type of material is obtained when an intrinsic semiconductor is doped with trivalent impurity?

Extrinsic semiconductor

Insulator

N-type semiconductor

P-type semiconductor

7.In a PN junction the potential barrier is due to the charges on either side of the junction, these charges are

Majority carriers

Minority carriers

Both (a) and (b)

Fixed donor and accepter ions

8. For a PN junction diode, the current in reverse bias maybe

Few milliamperes

Between 0.2 A and 15 A

Few amperes

Few micro or nano amperes

9.When PN junction is in forward bias, by increasing the battery voltage

Circuit resistance increases

Current through P_N junction increases

Current through P_N junction decreases

None of the above

10. When a PN junction is reverse biased

Holes and electrons tend to concentrate towards the junction

The barrier tends to break down

Holes and electrons tend to move away from the junction

None of these

11. A PN junction

Has low resistance in forward as well as reverse directions

Has high resistance in forward as well as reverse directions

Conducts in the forward direction only

Conducts in the reverse direction only

12. A crystal diode has ………

one PN Junction

Two PN Junction

three PN Junction

None of the above

13. The conductivity of a semiconductor increases with

Increase in temperature

decrease in temperature

below 25 degree C

below 273 K

14. The threshold voltage Vt of Silicon type PN junction diode is

0.7 Volt

0.3 Volt

1.0 Volt

None of the above

15. The Knee voltage Vk of Silicon type PN junction diode is

0.7 volt

0.3 volt

1.0 volt

None of the above

16. The threshold voltage Vt of Germanium type PN junction diode is

0.7 volt

0.3 volt

1.0 volt

1.1 volt

17. The Knee voltage Vk of Germanium type PN junction diode is

0.7 volt

0.3 volt

1.0 volt

1.1 volt

18. A crystal diode has forward resistance of the order of ……………

Ohm

Mega Ohm

Kilo Ohm

None of the above

19. The leakage current in a crystal diode is due to …………….

minority carriers

majority carriers

junction capacitance

none of the above

20.The knee voltage of a crystal diode is approximately equal to ………….

External applied voltage

breakdown voltage

PIV

barrier potential

21. The disadvantages of a half-wave rectifier ……………….

components are expensive

diodes must have a higher power rating

output is difficult to filter

none of the above

22. The main disadvantage of a half-wave rectifier ……………….

components are not commercially available

diodes are very costly

Efficiency is less

none of the above

23. The rectifier which always need a transformer ………………..

HWR

Centre tap FWR

Bridge type FWR

None of the above

24. The PIV rating of each diode in a bridge rectifier is ……………… that of the equivalent centre-tap rectifier

one-half

the same as

twice

four times

25. For the same secondary voltage, the output voltage from a centre-tap rectifier is ………… than that of bridge rectifier

twice

thrice

four time

one-half

26. If the PIV rating of a diode is exceeded, ………………

the diode conducts poorly

the diode is destroyed

the diode behaves like a zener diode

none of the above

27. The most widely used rectifier is ……………….

half-wave rectifier

centre-tap full-wave rectifier

bridge full-wave rectifier

Half wave without transformer

28. The ideal diode

Behaves as a perfect switch

has no forward resistance

No voltage drop

All of the above

29. The ac resistance of a diode is

2.6 mA always

26mA always

25.9 mA always

None of the above

The identity factor n for GaAs is equal to

1 volt

2 volt

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